2SJ377 Specs and Replacement
Type Designator: 2SJ377
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: SC64
2SJ377 substitution
2SJ377 Specs
2sj377.pdf
2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ377 Relay Drive, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.16 (typ.) DS (ON) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mo... See More ⇒
2sj377.pdf
2SJ377 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbol... See More ⇒
2sj378.pdf
2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ378 Relay Drive, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.16 (typ.) DS (ON) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mo... See More ⇒
Detailed specifications: 2SJ201 , 2SJ304 , 2SJ312 , 2SJ313 , 2SJ315 , 2SJ334 , 2SJ338 , 2SJ349 , IRF9540N , 2SJ378 , 2SJ380 , 2SJ401 , 2SJ402 , 2SJ407 , 2SJ412 , 2SJ438 , 2SJ439 .
History: RHU003N03
Keywords - 2SJ377 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: RHU003N03
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