2SJ401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ401 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 33 m (typ.) DS (ON) High forward transfer admittance Y = 20 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode

2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ402 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 29 m (typ.) DS (ON) High forward transfer admittance Y = 23 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode

2SJ407 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( -MOSV) 2SJ407 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current I = -100 A (max) (V = -200 V) DSS DS Enhancement-mode Vth = -1.5 -3.

Ordering number ENN6422 P-Channel Silicon MOSFET 2SJ400 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2093A 4V drive. [2SJ400] Enables simplified fabrication, high-density mount- 4.5 10.2 1.3 ing, and miniaturization in end products due to the surface mountable package. 1.2 0.8 0.4 1 2

2SJ409(L), 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source S 4. Drain 2SJ409(L), 2SJ409(S)