All MOSFET. 2SJ401 Datasheet

 

2SJ401 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SJ401
   Marking Code: J401
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO220FL TO220SM

 2SJ401 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ401 Datasheet (PDF)

 ..1. Size:420K  toshiba
 2sj401.pdf

2SJ401 2SJ401

2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ401 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 33 m (typ.) DS (ON) High forward transfer admittance : |Y | = 20 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode

 9.1. Size:420K  toshiba
 2sj402.pdf

2SJ401 2SJ401

2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ402 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 29 m (typ.) DS (ON) High forward transfer admittance : |Y | = 23 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode

 9.2. Size:397K  toshiba
 2sj407.pdf

2SJ401 2SJ401

2SJ407 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) 2SJ407 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.8 (typ.) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = -100 A (max) (V = -200 V) DSS DS Enhancement-mode : Vth = -1.5~-3.

 9.3. Size:43K  sanyo
 2sj400.pdf

2SJ401 2SJ401

Ordering number:ENN6422P-Channel Silicon MOSFET2SJ400Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A 4V drive.[2SJ400] Enables simplified fabrication, high-density mount-4.510.21.3ing, and miniaturization in end products due to thesurface mountable package.1.20.80.41 2

 9.4. Size:27K  hitachi
 2sj409l-s.pdf

2SJ401 2SJ401

2SJ409(L), 2SJ409(S)Silicon P-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converterOutlineLDPAK44123123DG1. Gate2. Drain3. SourceS4. Drain2SJ409(L), 2SJ409(S)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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