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2SJ407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ407

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 200 V

Corriente continua de drenaje (Id): 5 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 20 nC

Resistencia drenaje-fuente RDS(on): 0.8 Ohm

Empaquetado / Estuche: TO220NIS

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2SJ407 Datasheet (PDF)

1.1. 2sj407.pdf Size:397K _toshiba

2SJ407
2SJ407

2SJ407 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (?-MOSV) 2SJ407 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.8 ? (typ.) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = -100 µA (max) (V = -200 V) DSS DS Enhancement-mode : Vth = -1.5~-3.5 V

5.1. 2sj409l-s.pdf Size:27K _upd

2SJ407
2SJ407

2SJ409(L), 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V Gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source S 4. Drain 2SJ409(L), 2SJ409(S)

5.2. 2sj402.pdf Size:420K _toshiba

2SJ407
2SJ407

2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ402 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 29 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 23 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -60 V) DS Enhancement-mode :

 5.3. 2sj401.pdf Size:420K _toshiba

2SJ407
2SJ407

2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ401 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 33 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 20 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -60 V) DS Enhancement-mode :

5.4. 2sj400.pdf Size:43K _sanyo

2SJ407
2SJ407

Ordering number:ENN6422 P-Channel Silicon MOSFET 2SJ400 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A 4V drive. [2SJ400] Enables simplified fabrication, high-density mount- 4.5 10.2 1.3 ing, and miniaturization in end products due to the surface mountable package. 1.2 0.8 0.4 1 2 3 1 :

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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