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2SK1119 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1119

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 1000 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.5 V

Carga de compuerta (Qg): 60 nC

Resistencia drenaje-fuente RDS(on): 3.8 Ohm

Empaquetado / Estuche: TO220AB

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2SK1119 Datasheet (PDF)

1.1. 2sk1119.pdf Size:395K _toshiba

2SK1119
2SK1119

2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 ? (typ.) High forward transfer admittance : |Y | = 2.0 S (typ.) fs Low leakage current : I = 300 µA (max) (V = 800 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10 V, I = 1 mA)

4.1. 2sk1112.pdf Size:203K _update

2SK1119
2SK1119

4.2. 2sk1114.pdf Size:132K _update

2SK1119
2SK1119



 4.3. 2sk1115.pdf Size:78K _update

2SK1119
2SK1119

4.4. 2sk1113.pdf Size:85K _update

2SK1119
2SK1119

 4.5. 2sk1116.pdf Size:55K _update

2SK1119
2SK1119



4.6. 2sk1118.pdf Size:194K _toshiba

2SK1119
2SK1119

 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.7. 2sk1117.pdf Size:55K _no

2SK1119
2SK1119

Otros transistores... 2SJ512 , 2SJ516 , 2SJ525 , 2SJ618 , 2SJ619 , 2SJ620 , 2SJ669 , 2SJ676 , IRFP4232 , 2SK1120 , 2SK1381 , 2SK1382 , 2SK1486 , 2SK1529 , 2SK1530 , 2SK1544 , 2SK1930 .

 
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