2SK1119 Todos los transistores

2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 3.0 (typ.) High forward transfer admittance Y = 2.0 S (typ.) fs Low leakage current I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V (V = 10 V, I = 1

isc N-Channel MOSFET Transistor 2SK1119 FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage- V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 3.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

Free Datasheet http //www.datasheet4u.com/ Free Datasheet http //www.datasheet4u.com/

www.DataSheet4U.com www.DataSheet4U.com

Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

isc N-Channel MOSFET Transistor 2SK1117 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor 2SK1115 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

isc N-Channel MOSFET Transistor 2SK1114 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

isc N-Channel MOSFET Transistor 2SK1116 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 58m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

isc N-Channel MOSFET Transistor 2SK1118 DESCRIPTION Drain Current I =6A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rela