All MOSFET. 2SK1119 Datasheet

 

2SK1119 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1119
   Marking Code: K1119
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
   Package: TO220AB

 2SK1119 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1119 Datasheet (PDF)

 ..1. Size:395K  toshiba
2sk1119.pdf

2SK1119 2SK1119

2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High forward transfer admittance : |Y | = 2.0 S (typ.) fs Low leakage current : I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10 V, I = 1

 ..2. Size:262K  inchange semiconductor
2sk1119.pdf

2SK1119 2SK1119

isc N-Channel MOSFET Transistor 2SK1119FEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 3.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 8.1. Size:78K  toshiba
2sk1115.pdf

2SK1119 2SK1119

Free Datasheet http://www.datasheet4u.com/Free Datasheet http://www.datasheet4u.com/

 8.2. Size:55K  toshiba
2sk1116.pdf

2SK1119 2SK1119

 8.3. Size:85K  toshiba
2sk1113.pdf

2SK1119 2SK1119

www.DataSheet4U.comwww.DataSheet4U.com

 8.4. Size:203K  toshiba
2sk1112.pdf

2SK1119 2SK1119

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 8.5. Size:194K  toshiba
2sk1118.pdf

2SK1119 2SK1119

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.6. Size:55K  no
2sk1117.pdf

2SK1119 2SK1119

 8.7. Size:132K  no
2sk1114.pdf

2SK1119 2SK1119

 8.8. Size:261K  inchange semiconductor
2sk1117.pdf

2SK1119 2SK1119

isc N-Channel MOSFET Transistor 2SK1117FEATURESDrain Current I = 6.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 8.9. Size:260K  inchange semiconductor
2sk1115.pdf

2SK1119 2SK1119

isc N-Channel MOSFET Transistor 2SK1115FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 8.10. Size:261K  inchange semiconductor
2sk1114.pdf

2SK1119 2SK1119

isc N-Channel MOSFET Transistor 2SK1114FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 8.11. Size:261K  inchange semiconductor
2sk1116.pdf

2SK1119 2SK1119

isc N-Channel MOSFET Transistor 2SK1116FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 58m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 8.12. Size:250K  inchange semiconductor
2sk1118.pdf

2SK1119 2SK1119

isc N-Channel MOSFET Transistor 2SK1118DESCRIPTIONDrain Current I =6A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rela

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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