2SK1120 Todos los transistores

 ..1. Size:454K  toshiba
 2sk1120.pdf

2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII.5) 2SK1120 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.5 (typ.) High forward transfer admittance Y 4.0 S (typ.) fs = Low leakage current I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V (V = 10 V, I = 1

 ..2. Size:259K  inchange semiconductor
 2sk1120.pdf

isc N-Channel MOSFET Transistor 2SK1120 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 1.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 8.1. Size:54K  toshiba
 2sk1124.pdf

 8.2. Size:380K  nec
 2sk1122.pdf

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 2sk1123.pdf

 8.4. Size:259K  inchange semiconductor
 2sk1124.pdf

isc N-Channel MOSFET Transistor 2SK1124 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose