2SK1120 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1120 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.5 (typ.) High forward transfer admittance : |Y | 4.0 S (typ.) fs = Low leakage current : I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10 V, I = 1

isc N-Channel MOSFET Transistor 2SK1120FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor 2SK1124FEATURESDrain Current I = 45A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose