BUK565-100A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK565-100A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Paquete / Cubierta: SOT404

Búsqueda de reemplazo de MOSFET BUK565-100A

BUK565-100A Datasheet (PDF)

..1. Size:57K philips
buk565-100a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK565-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmount applications. ID Drain current (DC) 25 AThe device is intended for use in Pt

7.1. Size:72K philips
buk565-60h 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK565-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor ina plastic envelope suitable for VDS Drain-source voltage 60 Vsurface mount applications. ID Drain current (DC) 41 AThe device is intended for use in Pto

7.2. Size:57K philips
buk565-200a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK565-200A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 200 Vmount applications. ID Drain current (DC) 14 AThe device is intended for use in Pt

7.3. Size:58K philips
buk565-60a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK565-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 39 AThe device is intended for use in Ptot

Otros transistores... BUK545-100B , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A , 2SK3568 , BUK581-100A , BUK582-100A , BUK7506-30 , BUK7508-55 , BUK7510-30 , BUK7514-30 , BUK7514-55 , BUK7518-55 .

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