BUK565-100A Todos los transistores

 

BUK565-100A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK565-100A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm

Encapsulados: SOT404

 Búsqueda de reemplazo de BUK565-100A MOSFET

- Selecciónⓘ de transistores por parámetros

 

BUK565-100A datasheet

 ..1. Size:57K  philips
 buk565-100a 1.pdf pdf_icon

BUK565-100A

Philips Semiconductors Product specification PowerMOS transistor BUK565-100A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mount applications. ID Drain current (DC) 25 A The device is intended for use in Pt

 7.1. Size:72K  philips
 buk565-60h 1.pdf pdf_icon

BUK565-100A

Philips Semiconductors Product specification PowerMOS transistor BUK565-60H Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for VDS Drain-source voltage 60 V surface mount applications. ID Drain current (DC) 41 A The device is intended for use in Pto

 7.2. Size:57K  philips
 buk565-200a 1.pdf pdf_icon

BUK565-100A

Philips Semiconductors Product specification PowerMOS transistor BUK565-200A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 200 V mount applications. ID Drain current (DC) 14 A The device is intended for use in Pt

 7.3. Size:58K  philips
 buk565-60a 1.pdf pdf_icon

BUK565-100A

Philips Semiconductors Product specification PowerMOS transistor BUK565-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 39 A The device is intended for use in Ptot

MOSTRAR MÁS

Otros transistores... BUK545-100B , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A , 4435 , BUK581-100A , BUK582-100A , BUK7506-30 , BUK7508-55 , BUK7510-30 , BUK7514-30 , BUK7514-55 , BUK7518-55 .

History: BUK104-50SP

 

 

 


 
↑ Back to Top
.