BUK565-100A PDF and Equivalents Search

 

BUK565-100A Specs and Replacement

Type Designator: BUK565-100A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOT404

BUK565-100A substitution

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BUK565-100A datasheet

 ..1. Size:57K  philips
 buk565-100a 1.pdf pdf_icon

BUK565-100A

Philips Semiconductors Product specification PowerMOS transistor BUK565-100A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mount applications. ID Drain current (DC) 25 A The device is intended for use in Pt... See More ⇒

 7.1. Size:72K  philips
 buk565-60h 1.pdf pdf_icon

BUK565-100A

Philips Semiconductors Product specification PowerMOS transistor BUK565-60H Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for VDS Drain-source voltage 60 V surface mount applications. ID Drain current (DC) 41 A The device is intended for use in Pto... See More ⇒

 7.2. Size:57K  philips
 buk565-200a 1.pdf pdf_icon

BUK565-100A

Philips Semiconductors Product specification PowerMOS transistor BUK565-200A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 200 V mount applications. ID Drain current (DC) 14 A The device is intended for use in Pt... See More ⇒

 7.3. Size:58K  philips
 buk565-60a 1.pdf pdf_icon

BUK565-100A

Philips Semiconductors Product specification PowerMOS transistor BUK565-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 39 A The device is intended for use in Ptot... See More ⇒

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Detailed specifications: BUK545-100B , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A , 4435 , BUK581-100A , BUK582-100A , BUK7506-30 , BUK7508-55 , BUK7510-30 , BUK7514-30 , BUK7514-55 , BUK7518-55 .

Keywords - BUK565-100A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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