All MOSFET. BUK565-100A Datasheet

 

BUK565-100A Datasheet and Replacement


   Type Designator: BUK565-100A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT404
 

 BUK565-100A substitution

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BUK565-100A Datasheet (PDF)

 ..1. Size:57K  philips
 buk565-100a 1.pdf pdf_icon

BUK565-100A

Philips Semiconductors Product specification PowerMOS transistor BUK565-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmount applications. ID Drain current (DC) 25 AThe device is intended for use in Pt

 7.1. Size:72K  philips
 buk565-60h 1.pdf pdf_icon

BUK565-100A

Philips Semiconductors Product specification PowerMOS transistor BUK565-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor ina plastic envelope suitable for VDS Drain-source voltage 60 Vsurface mount applications. ID Drain current (DC) 41 AThe device is intended for use in Pto

 7.2. Size:57K  philips
 buk565-200a 1.pdf pdf_icon

BUK565-100A

Philips Semiconductors Product specification PowerMOS transistor BUK565-200A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 200 Vmount applications. ID Drain current (DC) 14 AThe device is intended for use in Pt

 7.3. Size:58K  philips
 buk565-60a 1.pdf pdf_icon

BUK565-100A

Philips Semiconductors Product specification PowerMOS transistor BUK565-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 39 AThe device is intended for use in Ptot

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Datasheet: BUK545-100B , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A , 2SK3568 , BUK581-100A , BUK582-100A , BUK7506-30 , BUK7508-55 , BUK7510-30 , BUK7514-30 , BUK7514-55 , BUK7518-55 .

History: BUK581-100A | FDS6961A

Keywords - BUK565-100A MOSFET datasheet

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