2SK2610 Todos los transistores

2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2610 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 2.3 (typ.) (ON) High forward transfer admittance Y 4.4 S (typ.) fs = Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0

2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 1.1 (typ.) (ON) High forward transfer admittance Y 7.0 S (typ.) fs = Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V =

2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Unit mm Motor Drive Applications Low drain-source ON-resistance RDS (ON) = 1.4 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 800 V) Enhancement-mod

2SK2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L - -MOSV) 2SK2614 Unit mm Chopper Regulator, DC-DC Converter and Motor Drive 6.8 MAX. Applications 5.2 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance RDS (ON) = 0.032 (typ.) High forward transfer admittance Yfs = 13 S (typ.) 0.95 MAX. Low leakage current IDSS = 1

2SK2615 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2615 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.23 (typ.) High forward transfer admittance Yfs = 2.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode Vth = 0.8 to 2.0 V (VD

Ordering number ENA0361A 2SK2617ALS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK2617ALS Applications Features Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS

Ordering number ENN5620B N-Channel Silicon MOSFET 2SK2616 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Low Qg. 2083B [2SK2616] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK2616] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1 Gate 1

2SK2619 TENTATIVE Features and Applications Low ON-state resistance. Low Qg Absoulute Maximum Ratings / Ta=25 C unit Drain to Source Voltage VDSS 500 V 30 Gate to Source Voltage VGSS V Drain Current (D.C.) 6 A ID Drain Current (Pulse) A IDP 24 Allowable power Dissipation PD (TC=25 C) 70 W Channel Temperature 150 Tch C Storage Temperature Tstg --55 to +150 C

2SK2615 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 4.5 V 7.1 RoHS 29 nC COMPLIANT 60 APPLICATIONS 0.088 at VGS = 10 V 6.7 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no

isc N-Channel MOSFET Transistor 2SK2611 DESCRIPTION Drain Current I =9A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS low on resistance. High speed switching. No secondary breakdown. Suitable for switchingregulator, DC DC control. A