All MOSFET. 2SK2610 Datasheet

 

2SK2610 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK2610
   Marking Code: K2610
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO3P

 2SK2610 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2610 Datasheet (PDF)

 ..1. Size:415K  toshiba
2sk2610.pdf

2SK2610 2SK2610

2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2610 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 2.3 (typ.) (ON) High forward transfer admittance : |Y | 4.4 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0

 8.1. Size:408K  toshiba
2sk2611.pdf

2SK2610 2SK2610

2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.1 (typ.) (ON) High forward transfer admittance : |Y | 7.0 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =

 8.2. Size:201K  toshiba
2sk2613.pdf

2SK2610 2SK2610

2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Unit: mmMotor Drive Applications Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 800 V) Enhancement-mod

 8.3. Size:222K  toshiba
2sk2614.pdf

2SK2610 2SK2610

2SK2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L --MOSV) 2SK2614 Unit: mmChopper Regulator, DC-DC Converter and Motor Drive 6.8 MAX. Applications 5.2 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 0.032 (typ.) High forward transfer admittance : |Yfs| = 13 S (typ.) 0.95 MAX. Low leakage current : IDSS = 1

 8.4. Size:404K  toshiba
2sk2615.pdf

2SK2610 2SK2610

2SK2615 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2615 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.23 (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode : Vth = 0.8 to 2.0 V (VD

 8.5. Size:51K  sanyo
2sk2617als.pdf

2SK2610 2SK2610

Ordering number : ENA0361A 2SK2617ALSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2617ALSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-speed switching.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 VGate-to-Source Voltage VGSS

 8.6. Size:113K  sanyo
2sk2616.pdf

2SK2610 2SK2610

Ordering number:ENN5620BN-Channel Silicon MOSFET2SK2616Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Low Qg.2083B[2SK2616]6.52.35.00.540.850.71.20.60.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SK2616]6.5 2.35.0 0.540.50.851 2 30.61 : Gate1

 8.7. Size:9K  sanyo
2sk2619.pdf

2SK2610

2SK2619TENTATIVEFeatures and Applications Low ON-state resistance. Low Qg Absoulute Maximum Ratings / Ta=25CunitDrain to Source Voltage VDSS 500 V 30Gate to Source Voltage VGSS VDrain Current (D.C.) 6 AIDDrain Current (Pulse) AIDP 24Allowable power Dissipation PD (TC=25C) 70 WChannel Temperature 150Tch C Storage TemperatureTstg --55 to +150 C

 8.8. Size:851K  cn vbsemi
2sk2615.pdf

2SK2610 2SK2610

2SK2615www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no

 8.9. Size:3978K  cn tech public
2sk2615.pdf

2SK2610 2SK2610

 8.10. Size:219K  inchange semiconductor
2sk2611.pdf

2SK2610 2SK2610

isc N-Channel MOSFET Transistor 2SK2611DESCRIPTIONDrain Current I =9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistance.High speed switching.No secondary breakdown.Suitable for switchingregulator, DCDC control.A

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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