BUK7506-30 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK7506-30  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 187 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: SOT78

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BUK7506-30 datasheet

 ..1. Size:49K  philips
 buk7506-30 1.pdf pdf_icon

BUK7506-30

Philips Semiconductors Product specification TrenchMOS transistor BUK7506-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC) 75 A features very low on-state

 6.1. Size:320K  philips
 buk7506-55a buk7606-55a.pdf pdf_icon

BUK7506-30

BUK7506-55A; BUK7606-55A TrenchMOS standard level FET Rev. 02 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q10

 6.2. Size:51K  philips
 buk7506-55a 1.pdf pdf_icon

BUK7506-30

Philips Semiconductors Product specification TrenchMOS transistor BUK7506-55A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology which features ID Drain current (DC) 75 A very low on-state resis

 6.3. Size:322K  philips
 buk7506-75b buk7606-75b.pdf pdf_icon

BUK7506-30

BUK75/7606-75B TrenchMOS standard level FET Rev. 02 20 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK7506-75B in SOT78 (TO-220AB) BUK7606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-stat

MOSTRAR MÁS

Otros transistores... BUK553-100A, BUK555-100A, BUK555-100B, BUK555-200A, BUK563-100A, BUK565-100A, BUK581-100A, BUK582-100A, P55NF06, BUK7508-55, BUK7510-30, BUK7514-30, BUK7514-55, BUK7518-55, BUK7524-55, BUK7528-55, BUK7535-55