Справочник MOSFET. BUK7506-30

 

BUK7506-30 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK7506-30
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 187 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: SOT78

 Аналог (замена) для BUK7506-30

 

 

BUK7506-30 Datasheet (PDF)

 ..1. Size:49K  philips
 buk7506-30 1.pdf

BUK7506-30 BUK7506-30

Philips Semiconductors Product specification TrenchMOS transistor BUK7506-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 75 Afeatures very low on-state

 6.1. Size:320K  philips
 buk7506-55a buk7606-55a.pdf

BUK7506-30 BUK7506-30

BUK7506-55A; BUK7606-55ATrenchMOS standard level FETRev. 02 03 July 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7506-55A in SOT78 (TO-220AB)BUK7606-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q10

 6.2. Size:51K  philips
 buk7506-55a 1.pdf

BUK7506-30 BUK7506-30

Philips Semiconductors Product specification TrenchMOS transistor BUK7506-55A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology which features ID Drain current (DC) 75 Avery low on-state resis

 6.3. Size:322K  philips
 buk7506-75b buk7606-75b.pdf

BUK7506-30 BUK7506-30

BUK75/7606-75BTrenchMOS standard level FETRev. 02 20 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK7506-75B in SOT78 (TO-220AB)BUK7606-75B in SOT404 (D2-PAK).1.2 Features Very low on-stat

 6.4. Size:281K  inchange semiconductor
 buk7506-55a.pdf

BUK7506-30 BUK7506-30

isc N-Channel MOSFET Transistor BUK7506-55AFEATURESStatic drain-source on-resistance:RDS(on) 6.3mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive and general purpose power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour

Другие MOSFET... BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A , BUK565-100A , BUK581-100A , BUK582-100A , RFP50N06 , BUK7508-55 , BUK7510-30 , BUK7514-30 , BUK7514-55 , BUK7518-55 , BUK7524-55 , BUK7528-55 , BUK7535-55 .

 

 
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