2SK3176 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3176 datasheet

..1. Size:186K toshiba
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2SK3176 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS V) 2SK3176 Switching Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 38 m (typ.) High forward transfer admittance Yfs = 30 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 200 V) Enhancement-mode Vth = 1.5 to 3.5

..2. Size:284K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK3176 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 52m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

8.1. Size:102K renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.2. Size:88K renesas
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2SK3177 Silicon N Channel MOS FET High Speed Power Switching REJ03G1089-0300 (Previous ADE-208-745A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =90m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3