2SK3176 PDF and Equivalents Search

 

2SK3176 Specs and Replacement

Type Designator: 2SK3176

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 1900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: TO3P

2SK3176 substitution

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2SK3176 datasheet

 ..1. Size:186K  toshiba
2sk3176.pdf pdf_icon

2SK3176

2SK3176 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS V) 2SK3176 Switching Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 38 m (typ.) High forward transfer admittance Yfs = 30 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 200 V) Enhancement-mode Vth = 1.5 to 3.5 ... See More ⇒

 ..2. Size:284K  inchange semiconductor
2sk3176.pdf pdf_icon

2SK3176

isc N-Channel MOSFET Transistor 2SK3176 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 52m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

 8.1. Size:102K  renesas
rej03g1089 2sk3177ds.pdf pdf_icon

2SK3176

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:88K  renesas
2sk3177.pdf pdf_icon

2SK3176

2SK3177 Silicon N Channel MOS FET High Speed Power Switching REJ03G1089-0300 (Previous ADE-208-745A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =90m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3 ... See More ⇒

Detailed specifications: 2SK3089, 2SK3090, 2SK3117, 2SK3125, 2SK3126, 2SK3127, 2SK3128, 2SK3130, IRF520, 2SK3205, 2SK3236, 2SK3265, 2SK3302, 2SK3309, 2SK3312, 2SK3313, 2SK3316

Keywords - 2SK3176 MOSFET specs

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