2SK3313 Todos los transistores

 ..1. Size:285K  toshiba
 2sk3313.pdf

 ..2. Size:279K  inchange semiconductor
 2sk3313.pdf

isc N-Channel MOSFET Transistor 2SK3313 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.62 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.1. Size:318K  toshiba
 2sk3312.pdf

2SK3312 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( --MOSV) 2SK3312 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Yfs = 3.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 5.0 V (VDS

 8.2. Size:191K  toshiba
 2sk3310.pdf

2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3310 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.48 (typ.) High forward transfer admittance Yfs = 4.3 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement model Vth = 3.0 5.0 V (VDS = 10 V, ID = 1 mA) Absolut

 8.3. Size:865K  toshiba
 2sk3316.pdf

2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3316 Switching Regulator Applications Unit mm Fast reverse recovery time trr = 60 ns (typ.) Built-in high-speed free-wheeling diode Low drain-source ON resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 3.8 S (typ.) Low leakage current IDSS = 100 A (m

 8.4. Size:709K  toshiba
 2sk3314.pdf

2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3314 Chopper Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications Fast reverse recovery time trr = 105 ns (typ.) Built-in high-speed free-wheeling diode Low drain-source ON resistance RDS (ON) = 0.35 (typ.) High forward transfer admittance Yfs = 9.9 S (ty

 8.5. Size:213K  panasonic
 2sk3318.pdf

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3318 Silicon N-channel power MOSFET Unit mm 15.0 0.3 5.0 0.2 For switching 11.0 0.2 (3.2) Features 3.2 0.1 Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron 2.0 0.2 2.0 0.1 No secondary breakdown 1.1 0.1 0.6 0.2 Absolute Maximum Rati

 8.6. Size:279K  inchange semiconductor
 2sk3310.pdf

isc N-Channel MOSFET Transistor 2SK3310 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.7. Size:279K  inchange semiconductor
 2sk3316.pdf

isc N-Channel MOSFET Transistor 2SK3316 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.8 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.8. Size:356K  inchange semiconductor
 2sk3312b.pdf

isc N-Channel MOSFET Transistor 2SK3312B FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.25 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.9. Size:287K  inchange semiconductor
 2sk3314.pdf

isc N-Channel MOSFET Transistor 2SK3314 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.49 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.10. Size:282K  inchange semiconductor
 2sk3312k.pdf

isc N-Channel MOSFET Transistor 2SK3312K FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.25 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid