2SK3313 PDF Specs and Replacement
Type Designator: 2SK3313
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 12
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 630
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62
Ohm
Package:
TO220NIS
-
MOSFET ⓘ Cross-Reference Search
2SK3313 PDF Specs
..2. Size:279K inchange semiconductor
2sk3313.pdf 
isc N-Channel MOSFET Transistor 2SK3313 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.62 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.1. Size:318K toshiba
2sk3312.pdf 
2SK3312 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( --MOSV) 2SK3312 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Yfs = 3.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 5.0 V (VDS ... See More ⇒
8.2. Size:191K toshiba
2sk3310.pdf 
2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3310 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.48 (typ.) High forward transfer admittance Yfs = 4.3 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement model Vth = 3.0 5.0 V (VDS = 10 V, ID = 1 mA) Absolut... See More ⇒
8.3. Size:865K toshiba
2sk3316.pdf 
2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3316 Switching Regulator Applications Unit mm Fast reverse recovery time trr = 60 ns (typ.) Built-in high-speed free-wheeling diode Low drain-source ON resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 3.8 S (typ.) Low leakage current IDSS = 100 A (m... See More ⇒
8.4. Size:709K toshiba
2sk3314.pdf 
2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3314 Chopper Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications Fast reverse recovery time trr = 105 ns (typ.) Built-in high-speed free-wheeling diode Low drain-source ON resistance RDS (ON) = 0.35 (typ.) High forward transfer admittance Yfs = 9.9 S (ty... See More ⇒
8.5. Size:213K panasonic
2sk3318.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3318 Silicon N-channel power MOSFET Unit mm 15.0 0.3 5.0 0.2 For switching 11.0 0.2 (3.2) Features 3.2 0.1 Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron 2.0 0.2 2.0 0.1 No secondary breakdown 1.1 0.1 0.6 0.2 Absolute Maximum Rati... See More ⇒
8.6. Size:279K inchange semiconductor
2sk3310.pdf 
isc N-Channel MOSFET Transistor 2SK3310 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.7. Size:279K inchange semiconductor
2sk3316.pdf 
isc N-Channel MOSFET Transistor 2SK3316 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.8 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
8.8. Size:356K inchange semiconductor
2sk3312b.pdf 
isc N-Channel MOSFET Transistor 2SK3312B FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.25 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.9. Size:287K inchange semiconductor
2sk3314.pdf 
isc N-Channel MOSFET Transistor 2SK3314 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.49 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.10. Size:282K inchange semiconductor
2sk3312k.pdf 
isc N-Channel MOSFET Transistor 2SK3312K FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.25 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
Detailed specifications: 2SK3130
, 2SK3176
, 2SK3205
, 2SK3236
, 2SK3265
, 2SK3302
, 2SK3309
, 2SK3312
, 75N75
, 2SK3316
, 2SK3342
, 2SK3374
, 2SK3387
, 2SK3388
, 2SK3389
, 2SK3397
, 2SK3398
.
Keywords - 2SK3313 MOSFET specs
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