All MOSFET. 2SK3313 Datasheet

 

2SK3313 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3313
   Marking Code: K3313
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   Maximum Drain Current |Id|: 12 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 45 nC
   Rise Time (tr): 22 nS
   Drain-Source Capacitance (Cd): 630 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.62 Ohm
   Package: TO220NIS

 2SK3313 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3313 Datasheet (PDF)

 ..1. Size:285K  toshiba
2sk3313.pdf

2SK3313 2SK3313

 ..2. Size:279K  inchange semiconductor
2sk3313.pdf

2SK3313 2SK3313

isc N-Channel MOSFET Transistor 2SK3313FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.62(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.1. Size:318K  toshiba
2sk3312.pdf

2SK3313 2SK3313

2SK3312 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (--MOSV) 2SK3312 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.9 (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 3.0~5.0 V (VDS

 8.2. Size:191K  toshiba
2sk3310.pdf

2SK3313 2SK3313

2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3310 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement model: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolut

 8.3. Size:865K  toshiba
2sk3316.pdf

2SK3313 2SK3313

2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3316 Switching Regulator Applications Unit: mm Fast reverse recovery time : trr = 60 ns (typ.) Built-in high-speed free-wheeling diode Low drain-source ON resistance : RDS (ON) = 1.6 (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current : IDSS = 100 A (m

 8.4. Size:709K  toshiba
2sk3314.pdf

2SK3313 2SK3313

2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3314 Chopper Regulator and DC-DC Converter Applications Unit: mmMotor Drive Applications Fast reverse recovery time : trr = 105 ns (typ.) Built-in high-speed free-wheeling diode Low drain-source ON resistance : RDS (ON) = 0.35 (typ.) High forward transfer admittance : |Yfs| = 9.9 S (ty

 8.5. Size:213K  panasonic
2sk3318.pdf

2SK3313 2SK3313

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3318Silicon N-channel power MOSFETUnit: mm15.00.3 5.00.2For switching11.00.2 (3.2) Features 3.20.1 Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron2.00.2 2.00.1 No secondary breakdown1.10.1 0.60.2 Absolute Maximum Rati

 8.6. Size:279K  inchange semiconductor
2sk3310.pdf

2SK3313 2SK3313

isc N-Channel MOSFET Transistor 2SK3310FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.7. Size:279K  inchange semiconductor
2sk3316.pdf

2SK3313 2SK3313

isc N-Channel MOSFET Transistor 2SK3316FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.8. Size:356K  inchange semiconductor
2sk3312b.pdf

2SK3313 2SK3313

isc N-Channel MOSFET Transistor 2SK3312BFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.9. Size:287K  inchange semiconductor
2sk3314.pdf

2SK3313 2SK3313

isc N-Channel MOSFET Transistor 2SK3314FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.49(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.10. Size:282K  inchange semiconductor
2sk3312k.pdf

2SK3313 2SK3313

isc N-Channel MOSFET Transistor 2SK3312KFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Datasheet: 2SK3130 , 2SK3176 , 2SK3205 , 2SK3236 , 2SK3265 , 2SK3302 , 2SK3309 , 2SK3312 , 8205A , 2SK3316 , 2SK3342 , 2SK3374 , 2SK3387 , 2SK3388 , 2SK3389 , 2SK3397 , 2SK3398 .

 

 
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