2SK3397 Todos los transistores

 ..1. Size:215K  toshiba
 2sk3397.pdf

2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3397 Relay Drive and DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 4.0 m (typ.) High forward transfer admittance Yfs = 110 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.5 to 3.0 V (V

 8.1. Size:190K  toshiba
 2sk3398.pdf

2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3398 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 0.4 m (typ.) High forward transfer admittance Yfs = 9.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement-mode Vth

 8.2. Size:220K  toshiba
 2sk3399.pdf

2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3399 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.54 (typ) High forward transfer admittance Yfs = 5.2 S (typ) Low leakage current IDSS = 100 A (max) (VDSS = 600 V) Enhancementmode Vth = 3.0 5.0 V (VDS = 10 V, ID = 1 mA) Absolute M

 8.3. Size:151K  renesas
 2sk3391.pdf

2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, add = 58% min. (f = 836 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A R (Package Name UPAK ) 3 1 2 1. Gate 3 1 2. Source 3. Drain 4. S

 8.4. Size:282K  inchange semiconductor
 2sk3399k.pdf

isc N-Channel MOSFET Transistor 2SK3399K FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.5. Size:356K  inchange semiconductor
 2sk3399b.pdf

isc N-Channel MOSFET Transistor 2SK3399B FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid