2SK3869 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3869
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 110 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.68 Ohm
Paquete / Cubierta: TO220SIS
Búsqueda de reemplazo de 2SK3869 MOSFET
2SK3869 Datasheet (PDF)
2sk3869.pdf

2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3869 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxi
2sk3869.pdf

isc N-Channel MOSFET Transistor 2SK3869FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.68(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3863.pdf

2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3863 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu
2sk3868.pdf

2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3868 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum R
Otros transistores... 2SK3625 , 2SK3662 , 2SK3667 , 2SK3669 , 2SK3797 , 2SK3844 , 2SK3846 , 2SK3847 , AON6414A , 2SK3903 , 2SK3904 , 2SK3905 , 2SK3907 , 2SK3911 , 2SK3934 , 2SK3935 , 2SK3947 .
History: SUN0760I2 | SJMN380R80ZFD | SML1001R1HN | MPVD5N50CCFD | APT1001RSVFR | SM2054NSV | TK4P50D
History: SUN0760I2 | SJMN380R80ZFD | SML1001R1HN | MPVD5N50CCFD | APT1001RSVFR | SM2054NSV | TK4P50D



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