All MOSFET. 2SK3869 Datasheet

 

2SK3869 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3869

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 450 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 28 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 110 pF

Maximum Drain-Source On-State Resistance (Rds): 0.68 Ohm

Package: TO220SIS

2SK3869 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3869 Datasheet (PDF)

1.1. 2sk3869.pdf Size:250K _toshiba

2SK3869
2SK3869

2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3869 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.55 ? (typ.) • High forward transfer admittance: |Yfs| = 5.5 S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 450 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

4.1. 2sk3868.pdf Size:234K _toshiba

2SK3869
2SK3869

2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3868 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.3? (typ.) • High forward transfer admittance: |Yfs| = 3S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 500 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Rati

4.2. 2sk3864.pdf Size:196K _toshiba

2SK3869
2SK3869

2SK3864 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3864 PDP Sustain Circuit Applications Unit: mm Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 20 m? (typ.) • High forward transfer admittance: |Yfs| = 75 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDSS = 120 V) • Enhancement mode: Vth = 2.0~4.0 V (V

 4.3. 2sk3863.pdf Size:297K _toshiba

2SK3869
2SK3869

2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3863 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35? (typ.) • High forward transfer admittance: |Yfs| = 2.8S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 500 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum R

4.4. 2sk386.pdf Size:41K _no

2SK3869

Datasheet: 2SK3625 , 2SK3662 , 2SK3667 , 2SK3669 , 2SK3797 , 2SK3844 , 2SK3846 , 2SK3847 , IRFP250 , 2SK3903 , 2SK3904 , 2SK3905 , 2SK3907 , 2SK3911 , 2SK3934 , 2SK3935 , 2SK3947 .

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