2SK3994 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3994
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 20 nS
Cossⓘ - Capacitancia de salida: 1000 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
Encapsulados: TO220NIS
Búsqueda de reemplazo de 2SK3994 MOSFET
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2SK3994 datasheet
..1. Size:255K toshiba
2sk3994.pdf 
2SK3994 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK3994 Switching Regulator, DC/DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON-resistance RDS (ON) = 90 m (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 250 V) Enhancement mode Vth = 3.0 t
..2. Size:279K inchange semiconductor
2sk3994.pdf
isc N-Channel MOSFET Transistor 2SK3994 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.1. Size:359K 1
2sk3995.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs er MOSFETs 2SK3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP Features Package Medium breakdown voltag VDSS = 200 V, ID = 30 A Code Low ON resistance, optimum for PDP panel drive TO-220C-G1 Marking Symbol K3995 Absolute Maximum Ratings T
8.2. Size:282K renesas
2sk3993-zk.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. Size:286K renesas
2sk3992-zk.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.4. Size:272K renesas
2sk3991-zk.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.5. Size:298K fuji
2sk3990-01l-01s-01sj.pdf
2SK3990-01L,S,SJ FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C
8.6. Size:172K hitachi
2sk399.pdf
Free Datasheet http //www.Datasheet4U.com Free Datasheet http //www.Datasheet4U.com Free Datasheet http //www.Datasheet4U.com Free Datasheet http //www.Datasheet4U.com Free Datasheet http //www.Datasheet4U.com Free Datasheet http //www.Datasheet4U.com
8.7. Size:287K inchange semiconductor
2sk3993-zk.pdf
isc N-Channel MOSFET Transistor 2SK3993-ZK FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 3.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.8. Size:356K inchange semiconductor
2sk3990-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3990-01SJ FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s
8.9. Size:355K inchange semiconductor
2sk3992.pdf
isc N-Channel MOSFET Transistor 2SK3992 FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 4.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.10. Size:287K inchange semiconductor
2sk3992-zk.pdf
isc N-Channel MOSFET Transistor 2SK3992-ZK FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 4.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.11. Size:354K inchange semiconductor
2sk3991.pdf
isc N-Channel MOSFET Transistor 2SK3991 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.12. Size:356K inchange semiconductor
2sk3990-01s.pdf
isc N-Channel MOSFET Transistor 2SK3990-01S FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
8.13. Size:286K inchange semiconductor
2sk3991-zk.pdf
isc N-Channel MOSFET Transistor 2SK3991-ZK FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.14. Size:354K inchange semiconductor
2sk3993.pdf
isc N-Channel MOSFET Transistor 2SK3993 FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 3.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.15. Size:282K inchange semiconductor
2sk3990-01l.pdf
isc N-Channel MOSFET Transistor 2SK3990-01L FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
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