2SK3994 - описание и поиск аналогов

2SK3994 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK3994 Switching Regulator, DC/DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON-resistance RDS (ON) = 90 m (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 250 V) Enhancement mode Vth = 3.0 t

isc N-Channel MOSFET Transistor 2SK3994 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs er MOSFETs 2SK3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP Features Package Medium breakdown voltag VDSS = 200 V, ID = 30 A Code Low ON resistance, optimum for PDP panel drive TO-220C-G1 Marking Symbol K3995 Absolute Maximum Ratings T

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3990-01L,S,SJ FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C

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isc N-Channel MOSFET Transistor 2SK3993-ZK FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 3.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

isc N-Channel MOSFET Transistor 2SK3990-01SJ FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

isc N-Channel MOSFET Transistor 2SK3992 FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 4.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3992-ZK FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 4.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

isc N-Channel MOSFET Transistor 2SK3991 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3990-01S FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

isc N-Channel MOSFET Transistor 2SK3991-ZK FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

isc N-Channel MOSFET Transistor 2SK3993 FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 3.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3990-01L FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so