2SK4106 Todos los transistores

 

2SK4106 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK4106

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 45 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 22 nS

Conductancia de drenaje-sustrato (Cd): 180 pF

Resistencia drenaje-fuente RDS(on): 0.52 Ohm

Empaquetado / Estuche: TO220NIS

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2SK4106 Datasheet (PDF)

1.1. 2sk4106.pdf Size:175K _toshiba

2SK4106
2SK4106

2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol

4.1. 2sk4105.pdf Size:199K _toshiba

2SK4106
2SK4106

2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4105 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso

4.2. 2sk4107.pdf Size:239K _toshiba

2SK4106
2SK4106

 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4107 ○ Switching Regulator Applications Unit: mm • Low drain-source ON resistance : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.) • Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

 4.3. 2sk4104.pdf Size:206K _toshiba

2SK4106
2SK4106

2SK4104 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4104 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

4.4. 2sk4108.pdf Size:281K _toshiba

2SK4106
2SK4106

2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4108 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0. 21Ω (typ.) High forward transfer admittance : |Yfs| = 14 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Max

 4.5. 2sk4103.pdf Size:296K _toshiba

2SK4106
2SK4106

2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK4103 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 2.8S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu

4.6. 2sk4100ls.pdf Size:97K _sanyo

2SK4106
2SK4106

www.DataSheet4U.com Ordering number : ENA0778 2SK4100LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4100LS Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guaran

4.7. 2sk4101ls.pdf Size:45K _sanyo

2SK4106
2SK4106

Ordering number : ENA0745 2SK4101LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4101LS Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. Spec

4.8. 2sk410.pdf Size:50K _hitachi

2SK4106
2SK4106

2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features High breakdown voltage You can decrease handling current. Included gate protection diode No secondarybreakdown Wide area of safe operation Simple bias circuitry No thermal runaway Outline 2SK410 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 180 V

Otros transistores... 2SK4018 , 2SK4019 , 2SK4020 , 2SK4021 , 2SK4022 , 2SK4103 , 2SK4104 , 2SK4105 , IRFP4332 , 2SK4107 , 2SK4108 , 2SK4110 , 2SK4111 , 2SK4112 , 2SK4113 , 2SK4114 , TJ120F06J3 .

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