2SK4106 Datasheet. Equivalente

 ..1. Size:175K  toshiba
 2sk4106.pdf

2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4106 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.4 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol

 8.1. Size:206K  toshiba
 2sk4104.pdf

2SK4104 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4104 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 3.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

 8.2. Size:199K  toshiba
 2sk4105.pdf

2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4105 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.75 (typ.) High forward transfer admittance Yfs = 6.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso

 8.3. Size:281K  toshiba
 2sk4108.pdf

2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) 2SK4108 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0. 21 (typ.) High forward transfer admittance Yfs = 14 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Max

 8.4. Size:296K  toshiba
 2sk4103.pdf

2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK4103 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 2.8S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu

 8.5. Size:239K  toshiba
 2sk4107.pdf

2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) 2SK4107 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0. 33 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

 8.6. Size:45K  sanyo
 2sk4101ls.pdf

Ordering number ENA0745 2SK4101LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4101LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specification

 8.7. Size:97K  sanyo
 2sk4100ls.pdf

www.DataSheet4U.com Ordering number ENA0778 2SK4100LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4100LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guaran

 8.8. Size:50K  hitachi
 2sk410.pdf

2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features High breakdown voltage You can decrease handling current. Included gate protection diode No secondary breakdown Wide area of safe operation Simple bias circuitry No thermal runaway Outline 2SK410 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to sourc

 8.9. Size:279K  inchange semiconductor
 2sk4101ls.pdf

isc N-Channel MOSFET Transistor 2SK4101LS FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.10. Size:279K  inchange semiconductor
 2sk4100ls.pdf

isc N-Channel MOSFET Transistor 2SK4100LS FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.35 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.11. Size:286K  inchange semiconductor
 2sk4108.pdf

isc N-Channel MOSFET Transistor 2SK4108 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno