All MOSFET. 2SK4106 Datasheet

 

2SK4106 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK4106

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 22 nS

Drain-Source Capacitance (Cd): 180 pF

Maximum Drain-Source On-State Resistance (Rds): 0.52 Ohm

Package: TO220NIS

2SK4106 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK4106 Datasheet (PDF)

0.1. 2sk4106.pdf Size:175K _toshiba

2SK4106
2SK4106

2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol

8.1. 2sk4105.pdf Size:199K _toshiba

2SK4106
2SK4106

2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4105 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso

8.2. 2sk4103.pdf Size:296K _toshiba

2SK4106
2SK4106

2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK4103 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 2.8S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu

 8.3. 2sk4104.pdf Size:206K _toshiba

2SK4106
2SK4106

2SK4104 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4104 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

8.4. 2sk4107.pdf Size:239K _toshiba

2SK4106
2SK4106

 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4107 ○ Switching Regulator Applications Unit: mm • Low drain-source ON resistance : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.) • Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

 8.5. 2sk4108.pdf Size:281K _toshiba

2SK4106
2SK4106

2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4108 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0. 21Ω (typ.) High forward transfer admittance : |Yfs| = 14 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Max

8.6. 2sk4100ls.pdf Size:97K _sanyo

2SK4106
2SK4106

www.DataSheet4U.com Ordering number : ENA0778 2SK4100LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4100LS Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guaran

8.7. 2sk4101ls.pdf Size:45K _sanyo

2SK4106
2SK4106

Ordering number : ENA0745 2SK4101LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4101LS Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. Specification

8.8. 2sk410.pdf Size:50K _hitachi

2SK4106
2SK4106

2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features • High breakdown voltage • You can decrease handling current. • Included gate protection diode • No secondary–breakdown • Wide area of safe operation • Simple bias circuitry • No thermal runaway Outline 2SK410 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to sourc

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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