TK20J60T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK20J60T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 190 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 3800 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Encapsulados: TO3P
Búsqueda de reemplazo de TK20J60T MOSFET
- Selecciónⓘ de transistores por parámetros
TK20J60T datasheet
tk20j60t.pdf
TK20J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20J60T Switching Regulator Applications Unit mm 3.2 0.2 15.9max. Low drain-source ON resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VD
tk20j60w5.pdf
TK20J60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20J60W5 TK20J60W5 TK20J60W5 TK20J60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.15 (typ.) by used to Super Junction Str
tk20j60w.pdf
TK20J60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20J60W TK20J60W TK20J60W TK20J60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En
tk20j60u.pdf
TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20J60U Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source ON-resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 to 5.0 V
Otros transistores... TK16H60C , TK17A25D , TK19H50C , TK20A20D , TK20A60T , TK20D60T , TK20D60U , TK20H50C , RFP50N06 , TK40A10N1 , TK40D10J1 , TK40E10N1 , TK50F15J1 , TK55D10J1 , TK60D08J1 , TK65A10N1 , TK65E10N1 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASB80R750E | ASB70R380E | ASB65R300E | ASB65R220E | ASB65R120EFD | ASB60R150E | ASA80R900E | ASA80R750E | ASA80R290E | ASA70R950E | ASA70R600E | ASA70R380E | ASA70R240E | ASA65R850E | ASA65R550E | ASA65R350E
Popular searches
bc550c | 2n3904 transistor datasheet | p75nf75 | d880 transistor | 2sc1845 | p60nf06 | 2sa1837 | ksc1845 transistor
