TK20J60T Todos los transistores

 

TK20J60T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK20J60T

Código: K20J60T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 190 W

Tensión drenaje-fuente |Vds|: 600 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 30 nC

Tiempo de elevación (tr): 40 nS

Conductancia de drenaje-sustrato (Cd): 3800 pF

Resistencia drenaje-fuente RDS(on): 0.19 Ohm

Empaquetado / Estuche: TO3P

Búsqueda de reemplazo de MOSFET TK20J60T

 

TK20J60T Datasheet (PDF)

0.1. tk20j60t.pdf Size:152K _toshiba

TK20J60T
TK20J60T

TK20J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20J60T Switching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VD

7.1. tk20j60u.pdf Size:192K _toshiba

TK20J60T
TK20J60T

TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20J60U Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON-resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V

7.2. tk20j60w.pdf Size:242K _toshiba

TK20J60T
TK20J60T

TK20J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20J60WTK20J60WTK20J60WTK20J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 7.3. tk20j60w5.pdf Size:239K _toshiba

TK20J60T
TK20J60T

TK20J60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20J60W5TK20J60W5TK20J60W5TK20J60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.) by used to Super Junction Str

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


TK20J60T
  TK20J60T
  TK20J60T
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: HSW8810 | HSW8205 | HSW6811 | HSW6800 | HSW6604 | HSW4602 | HSW3415 | HSW2N15 | HSU90N03 | HSU90N02 | HSU80N03 | HSU70P06 | HSU6903 | HSU6901 | HSU6115 | HSU6113

 

 

 
Back to Top