Справочник MOSFET. TK20J60T

 

TK20J60T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK20J60T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 190 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 3800 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для TK20J60T

 

 

TK20J60T Datasheet (PDF)

 ..1. Size:152K  toshiba
 tk20j60t.pdf

TK20J60T TK20J60T

TK20J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20J60T Switching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VD

 7.1. Size:239K  toshiba
 tk20j60w5.pdf

TK20J60T TK20J60T

TK20J60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20J60W5TK20J60W5TK20J60W5TK20J60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.) by used to Super Junction Str

 7.2. Size:242K  toshiba
 tk20j60w.pdf

TK20J60T TK20J60T

TK20J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20J60WTK20J60WTK20J60WTK20J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 7.3. Size:192K  toshiba
 tk20j60u.pdf

TK20J60T TK20J60T

TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20J60U Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON-resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V

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