TK40E10N1 Todos los transistores

 

TK40E10N1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK40E10N1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 126 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 520 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0082 Ohm
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de TK40E10N1 MOSFET

   - Selección ⓘ de transistores por parámetros

 

TK40E10N1 Datasheet (PDF)

 ..1. Size:253K  toshiba
 tk40e10n1.pdf pdf_icon

TK40E10N1

TK40E10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK40E10N1TK40E10N1TK40E10N1TK40E10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 6.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3) Enha

 ..2. Size:232K  inchange semiconductor
 tk40e10n1.pdf pdf_icon

TK40E10N1

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK40E10N1ITK40E10N1FEATURESLow drain-source on-resistance:RDS(on) 8.2m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIM

 9.1. Size:246K  toshiba
 tk40e06n1.pdf pdf_icon

TK40E10N1

TK40E06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK40E06N1TK40E06N1TK40E06N1TK40E06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 8.4 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3) Enhan

Otros transistores... TK20A20D , TK20A60T , TK20D60T , TK20D60U , TK20H50C , TK20J60T , TK40A10N1 , TK40D10J1 , 18N50 , TK50F15J1 , TK55D10J1 , TK60D08J1 , TK65A10N1 , TK65E10N1 , TK6B60D , TK70D06J1 , TK70J06K3 .

History: FQI13N50C | PSMN1R6-30BL | TK60D08J1 | TK20H50C | TK55D10J1 | FQP10N20C

 

 
Back to Top

 


 
.