TK40E10N1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK40E10N1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 126 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 520 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0082 Ohm
Encapsulados: TO220
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TK40E10N1 datasheet
tk40e10n1.pdf
TK40E10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK40E10N1 TK40E10N1 TK40E10N1 TK40E10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 6.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3) Enha
tk40e10n1.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK40E10N1 ITK40E10N1 FEATURES Low drain-source on-resistance RDS(on) 8.2m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIM
tk40e06n1.pdf
TK40E06N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK40E06N1 TK40E06N1 TK40E06N1 TK40E06N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 8.4 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3) Enhan
Otros transistores... TK20A20D , TK20A60T , TK20D60T , TK20D60U , TK20H50C , TK20J60T , TK40A10N1 , TK40D10J1 , 18N50 , TK50F15J1 , TK55D10J1 , TK60D08J1 , TK65A10N1 , TK65E10N1 , TK6B60D , TK70D06J1 , TK70J06K3 .
History: BSZ15DC02KD
History: BSZ15DC02KD
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