TK40E10N1 MOSFET. Datasheet pdf. Equivalent
Type Designator: TK40E10N1
Marking Code: K40E10N1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 126 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 49 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 520 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
Package: TO220
TK40E10N1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK40E10N1 Datasheet (PDF)
tk40e10n1.pdf
TK40E10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK40E10N1TK40E10N1TK40E10N1TK40E10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 6.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3) Enha
tk40e10n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK40E10N1ITK40E10N1FEATURESLow drain-source on-resistance:RDS(on) 8.2m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIM
tk40e06n1.pdf
TK40E06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK40E06N1TK40E06N1TK40E06N1TK40E06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 8.4 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3) Enhan
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