TPC6104 Todos los transistores

 ..1. Size:285K  toshiba
 tpc6104.pdf

TPC6104 P MOS (U-MOSIII) TPC6104 PC mm R = 33 m ( ) DS (ON) Yfs = 12 S ( )

 8.1. Size:220K  toshiba
 tpc6106.pdf

TPC6106 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPC6106 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 58 m (typ.) High forward transfer admittance Yfs = 5.5 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -40

 8.2. Size:204K  toshiba
 tpc6105.pdf

TPC6105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6105 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 72 m (typ.) High forward transfer admittance Yfs = 4.7 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -20 V) Enhancement mode Vth = -0.5 to -1.2 V

 8.3. Size:192K  toshiba
 tpc6107.pdf

TPC6107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) TPC6107 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 40 m (typ.) High forward transfer admittance Yfs = 9.6 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 20 V)

 8.4. Size:260K  toshiba
 tpc6109-h.pdf

TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6109-H High-Efficiency DC-DC Converter Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 44 m (typ.) (VDS = -10 V) High forward transfer admittance Yfs = 8.0 S (typ.) Low leakage current IDSS = -1

 8.5. Size:86K  toshiba
 tpc6108.pdf

TPC6108 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC6108 TENTATIVE Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 50 m (typ.) DS (ON) High forward transfer admittance Y = 7.4 S (typ.) fs Low leakage cur

 8.6. Size:192K  toshiba
 tpc6102.pdf

TPC6102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6102 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 48 m (typ.) High forward transfer admittance Yfs = 6 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V (VDS =

 8.7. Size:254K  toshiba
 tpc6103.pdf

TPC6103 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6103 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 29 m (typ.) High forward transfer admittance Yfs = 13 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -12 V) Enhancement mode Vth

 8.8. Size:165K  toshiba
 tpc6101.pdf

TPC6101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6101 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance R = 48 m (typ.) DS (ON) High forward transfer admittance Yfs = 8.2 S (typ.) Low leakage current I = -10 A (max) (V = -20 V) DSS DS Enhancement-model V = -0.5 to -1.2 V