TPC8040-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8040-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.9 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.5 nS
Cossⓘ - Capacitancia de salida: 330 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0097 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de TPC8040-H MOSFET
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TPC8040-H datasheet
tpc8042.pdf
TPC8042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8042 Lithium-Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 2.7 m (typ.) High forward transfer admittance Yfs = 42 S (typ.) Low leakage curr
tpc8047-h.pdf
TPC8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8047-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 11 nC (typ.) Low drain-source ON-resistance RDS (ON) = 5.1 m (typ.) H
tpc8046-h.pdf
TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8046-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 15 nC (typ.) Low drain-source ON-resistance RDS (ON) = 3.8 m (typ.) H
Otros transistores... TPC8032-H , TPC8033-H , TPC8034-H , TPC8035-H , TPC8036-H , TPC8037-H , TPC8038-H , TPC8039-H , P55NF06 , TPC8054-H , TPC8060-H , TPC8104-H , TPC8105-H , TPC8107 , TPC8108 , TPC8109 , TPC8110 .
History: TPC8054-H
History: TPC8054-H
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