TPC8040-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8040-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.5 nS
Cossⓘ - Capacitancia de salida: 330 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0097 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de TPC8040-H MOSFET
TPC8040-H Datasheet (PDF)
tpc8040-h.pdf

TPC8040-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8040-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.4 m
tpc8042.pdf

TPC8042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8042 Lithium-Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 2.7 m (typ.) High forward transfer admittance: |Yfs| = 42 S (typ.) Low leakage curr
tpc8047-h.pdf

TPC8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8047-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 11 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.1 m (typ.) H
tpc8046-h.pdf

TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8046-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 15 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 m (typ.) H
Otros transistores... TPC8032-H , TPC8033-H , TPC8034-H , TPC8035-H , TPC8036-H , TPC8037-H , TPC8038-H , TPC8039-H , 2SK3878 , TPC8054-H , TPC8060-H , TPC8104-H , TPC8105-H , TPC8107 , TPC8108 , TPC8109 , TPC8110 .
History: 2SK2940L | WMB080N10LG2 | TPC8104-H | FDC634P | H5N2510DS | NCE01P30I | APM4953KC
History: 2SK2940L | WMB080N10LG2 | TPC8104-H | FDC634P | H5N2510DS | NCE01P30I | APM4953KC



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