TPC8040-H Datasheet. Specs and Replacement

Type Designator: TPC8040-H  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm

Package: SOP8

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TPC8040-H datasheet

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TPC8040-H

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TPC8040-H

TPC8042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8042 Lithium-Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 2.7 m (typ.) High forward transfer admittance Yfs = 42 S (typ.) Low leakage curr... See More ⇒

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TPC8040-H

TPC8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8047-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 11 nC (typ.) Low drain-source ON-resistance RDS (ON) = 5.1 m (typ.) H... See More ⇒

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TPC8040-H

TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8046-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 15 nC (typ.) Low drain-source ON-resistance RDS (ON) = 3.8 m (typ.) H... See More ⇒

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Detailed specifications: TPC8032-H, TPC8033-H, TPC8034-H, TPC8035-H, TPC8036-H, TPC8037-H, TPC8038-H, TPC8039-H, AO3400, TPC8054-H, TPC8060-H, TPC8104-H, TPC8105-H, TPC8107, TPC8108, TPC8109, TPC8110

Keywords - TPC8040-H MOSFET specs

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