TPC8116-H Todos los transistores

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TPC8116-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPC8116-H

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.9 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 7.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 250 pF

Resistencia drenaje-fuente RDS(on): 0.03 Ohm

Empaquetado / Estuche: SOP8

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TPC8116-H Datasheet (PDF)

1.1. tpc8116-h.pdf Size:279K _toshiba2

TPC8116-H
TPC8116-H

TPC8116-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8116-H High Efficiency DC/DC Converter Applications Unit: mm Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW = 9.7 nC (typ.) • Low

4.1. tpc8114.pdf Size:278K _toshiba2

TPC8116-H
TPC8116-H

TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8114 Lithium Ion Battery Applications Unit: mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 m? (typ.) High forward transfer admittance: |Yfs| = 47 S (typ.) Low leakage current: IDSS = -10

4.2. tpc8113.pdf Size:273K _toshiba2

TPC8116-H
TPC8116-H

TPC8113 東芝電界効果トランジスタ シリコンPチャネルMOS形 (U-MOS IV) TPC8113 ○ リチウムイオン2次電池用 単位: mm ○ ノートブックPC用 ○ 携帯電子機器用 • 小型、薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 8 mΩ (標準) • 順方向伝達アドミタンスが高い。 : |Yfs| = 23 S (標

4.3. tpc8110.pdf Size:216K _toshiba2

TPC8116-H
TPC8116-H

TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: R = 17 mΩ (typ.) DS (ON) • High forward transfer admittance: |Y | = 16 S (typ.) fs • Low leakage

4.4. tpc8112.pdf Size:274K _toshiba2

TPC8116-H
TPC8116-H

TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8112 Lithium Ion Battery Applications Unit: mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.0m? (typ.) High forward transfer admittance: |Yfs| = 31 S (typ.) Low leakage current: IDSS = -10

4.5. tpc8118.pdf Size:196K _toshiba2

TPC8116-H
TPC8116-H

TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8118 Notebook PC Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 36 S (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) • Enhancement mode: Vth = -

4.6. tpc8119.pdf Size:256K _toshiba2

TPC8116-H
TPC8116-H

TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC8119 Lithium-Ion Battery Applications Unit: mm Load switch Applications Notebook PC Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 10 mΩ (typ.) • High forward transfer admittance: |Yfs| = 24 S (typ.) • Low leakage current: IDSS

4.7. tpc8111.pdf Size:231K _toshiba2

TPC8116-H
TPC8116-H

TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8111 Lithium Ion Battery Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage curre

4.8. tpc8117.pdf Size:214K _toshiba2

TPC8116-H
TPC8116-H

TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8117 Lithium Ion Battery Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain-source ON-resistance : RDS (ON) = 3.0 mΩ (typ.) • High forward transfer admittance : |Yfs| = 54 S (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -

4.9. tpc8115.pdf Size:280K _toshiba2

TPC8116-H
TPC8116-H

TPC8115 東芝電界効果トランジスタ シリコンPチャネルMOS形 (U-MOS IV) TPC8115 ○ リチウムイオン2次電池用 単位: mm ○ ノートブックPC用 ○ 携帯電子機器用 • 小型、薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 6.5 mΩ (標準) • 順方向伝達アドミタンスが高い。 : |Yfs| = 40 S (

Otros transistores... TPC8108 , TPC8109 , TPC8110 , TPC8111 , TPC8112 , TPC8113 , TPC8114 , TPC8115 , IRF9540 , TPC8117 , TPC8118 , TPC8119 , TPC8121 , TPC8122 , TPC8203 , TPC8206 , TPC8207 .

 


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