TPC8116-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8116-H
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.9 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de TPC8116-H MOSFET
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TPC8116-H datasheet
tpc8116-h.pdf
TPC8116-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8116-H High Efficiency DC DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge QSW = 9.7 nC (typ.) Low
tpc8117.pdf
TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8117 Lithium Ion Battery Applications Unit mm Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 3.0 m (typ.) High forward transfer admittance Yfs = 54 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -
tpc8110.pdf
TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 17 m (typ.) DS (ON) High forward transfer admittance Y = 16 S (typ.) fs Low leakage
tpc8114.pdf
TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8114 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 3.1 m (typ.) High forward transfer admittance Yfs = 47 S (typ.) Low leakage curre
Otros transistores... TPC8108, TPC8109, TPC8110, TPC8111, TPC8112, TPC8113, TPC8114, TPC8115, K3569, TPC8117, TPC8118, TPC8119, TPC8121, TPC8122, TPC8203, TPC8206, TPC8207
History: SSG4410N
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