TPC8116-H - описание и поиск аналогов

TPC8116-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8116-H High Efficiency DC DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge QSW = 9.7 nC (typ.) Low

TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8117 Lithium Ion Battery Applications Unit mm Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 3.0 m (typ.) High forward transfer admittance Yfs = 54 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -

TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 17 m (typ.) DS (ON) High forward transfer admittance Y = 16 S (typ.) fs Low leakage

TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8114 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 3.1 m (typ.) High forward transfer admittance Yfs = 47 S (typ.) Low leakage curre

TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8112 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 5.0m (typ.) High forward transfer admittance Yfs = 31 S (typ.) Low leakage curren

TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8111 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 8.1 m (typ.) High forward transfer admittance Yfs = 23 S (typ.) Low leakage curre

TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC8119 Lithium-Ion Battery Applications Unit mm Load switch Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 10 m (typ.) High forward transfer admittance Yfs = 24 S (typ.) Low leakage current IDSS

TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8118 Notebook PC Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 5.5 m (typ.) High forward transfer admittance Yfs = 36 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -

TPC8113 P MOS (U-MOS IV) TPC8113 2 mm PC RDS (ON) = 8 m ( ) Yfs = 23 S (