BUK7880-55 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK7880-55
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SOT223

Búsqueda de reemplazo de MOSFET BUK7880-55

BUK7880-55 Datasheet (PDF)

..1. Size:53K philips
buk7880-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7880-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technolgy ID Drain current 7.5 Athe device featu

0.1. Size:98K philips
buk7880-55a.pdf

BUK7880-55AN-channel TrenchMOS standard level FETRev. 01 1 November 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP General Purpose Automotive (GPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 150 C rated Standard level compatible

0.2. Size:758K nxp
buk7880-55a.pdf

BUK7880-55AN-channel TrenchMOS standard level FET19 June 2015 Product data sheet1. General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicatio

0.3. Size:976K cn vbsemi
buk7880-55a.pdf

BUK7880-55Awww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, un

Otros transistores... BUK7620-55 , BUK7624-55 , BUK7628-55 , BUK7635-55 , BUK7675-55 , BUK78150-55 , BUK7830-30 , BUK7840-55 , 7N60 , BUK9120-48TC , BUK9506-30 , BUK9508-55 , BUK9510-30 , BUK9514-30 , BUK9514-55 , BUK9518-30 , BUK9518-55 .

History: 2N7271H

Liste

Recientemente añadidas las descripciónes de los transistores: