BUK7880-55 - аналоги, параметры транзистора - Справочник транзисторов

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Philips Semiconductors Product specification TrenchMOS transistor BUK7880-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technolgy ID Drain current 7.5 A the device featu

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BUK7880-55A N-channel TrenchMOS standard level FET Rev. 01 1 November 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 150 C rated Standard level compatible

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BUK7880-55A N-channel TrenchMOS standard level FET 19 June 2015 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicatio

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BUK7880-55A www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4.5 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3.5 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, un

Другие MOSFET... BUK7620-55 , BUK7624-55 , BUK7628-55 , BUK7635-55 , BUK7675-55 , BUK78150-55 , BUK7830-30 , BUK7840-55 , SI2302 , BUK9120-48TC , BUK9506-30 , BUK9508-55 , BUK9510-30 , BUK9514-30 , BUK9514-55 , BUK9518-30 , BUK9518-55 .