TPCC8005-H Todos los transistores

 

TPCC8005-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCC8005-H
   Código: 8005H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 26 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 19 nC
   trⓘ - Tiempo de subida: 4.5 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm
   Paquete / Cubierta: TSON-ADVANCE
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TPCC8005-H Datasheet (PDF)

 ..1. Size:175K  toshiba
 tpcc8005-h.pdf pdf_icon

TPCC8005-H

TPCC8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8005-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.2

 7.1. Size:215K  toshiba
 tpcc8009.pdf pdf_icon

TPCC8005-H

TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCC8009 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 5 m (typ.) ( VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 30 V)

 7.2. Size:227K  toshiba
 tpcc8007.pdf pdf_icon

TPCC8005-H

TPCC8007MOSFETs Silicon N-channel MOS (U-MOS)TPCC8007TPCC8007TPCC8007TPCC80071. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.5 m (typ.) (VGS = 4.5 V)(3) Low leakage

 7.3. Size:176K  toshiba
 tpcc8002-h.pdf pdf_icon

TPCC8005-H

TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8002-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6

MOSTRAR MÁS

Otros transistores... TPCA8102 , TPCA8103 , TPCA8106 , TPCA8121 , TPCA8A01-H , TPCC8001-H , TPCC8002-H , TPCC8003-H , 8205A , TPCC8006-H , TPCC8102 , TPCF8001 , TPCF8102 , TPCF8103 , TPCF8104 , TPCF8302 , TPCF8303 .

 

 
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