TPCC8005-H
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPCC8005-H
Marking Code: 8005H
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 26
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 4.5
nS
Cossⓘ -
Output Capacitance: 440
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0064
Ohm
Package:
TSON-ADVANCE
TPCC8005-H
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPCC8005-H
Datasheet (PDF)
..1. Size:175K toshiba
tpcc8005-h.pdf 
TPCC8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8005-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.2
7.1. Size:215K toshiba
tpcc8009.pdf
TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCC8009 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 5 m (typ.) ( VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
7.2. Size:227K toshiba
tpcc8007.pdf
TPCC8007MOSFETs Silicon N-channel MOS (U-MOS)TPCC8007TPCC8007TPCC8007TPCC80071. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.5 m (typ.) (VGS = 4.5 V)(3) Low leakage
7.3. Size:176K toshiba
tpcc8002-h.pdf
TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8002-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6
7.4. Size:278K toshiba
tpcc8008.pdf
TPCC8008 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCC8008 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 4.5 m (typ.) ( VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.
7.5. Size:190K toshiba
tpcc8006-h.pdf
TPCC8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8006-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.5
7.6. Size:217K toshiba
tpcc8003-h.pdf
TPCC8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8003-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 14.3
7.7. Size:176K toshiba
tpcc8001-h.pdf
TPCC8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8001-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6
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