TPCF8102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPCF8102

Código: F3B

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Tensión umbral compuerta-fuente Vgs(th): 1.2 V

Corriente continua de drenaje (Id): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 7 nS

Conductancia de drenaje-sustrato (Cd): 265 pF

Resistencia drenaje-fuente RDS(on): 0.03 Ohm

Empaquetado / Estuche: VS8

Búsqueda de reemplazo de MOSFET TPCF8102

TPCF8102 Datasheet (PDF)

1.1. tpcf8102.pdf Size:224K _toshiba2

TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Unit: mm Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) • Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) • Enhancement mode: Vth = -0.5 to -1.2 V

3.1. tpcf8107 en datasheet 100716.pdf Size:228K _toshiba2

TPCF8107 MOSFETs Silicon P-Channel MOS (U-MOS?) TPCF8107 TPCF8107 TPCF8107 TPCF8107 1. Applications 1. Applications 1. Applications 1. Applications � Lithium-Ion Secondary Batteries � Power Management Switches � Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 22 m? (typ.

3.2. tpcf8103.pdf Size:295K _toshiba2

TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Unit: mm Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7S (typ.) • Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) • Enhancement-model: Vth = -0.5 to -1.2 V

3.3. tpcf8101.pdf Size:252K _toshiba2

TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebook PC Applications Unit: mm Portable Equipment Applications � Low drain-source ON resistance: RDS (ON) = 22 m? (typ.) � High forward transfer admittance: |Yfs| = 14 S (typ.) � Low leakage current: IDSS = -10 �A (max) (VDS = -12 V) � Enhancement model: Vth = -0.5 to -1.2 V (VDS = -10 V

3.4. tpcf8104.pdf Size:264K _toshiba2

TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCF8104 Notebook PC Applications Unit: mm Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.) • Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V

3.5. tpcf8105 en datasheet 100913.pdf Size:223K _toshiba2

TPCF8105 MOSFETs Silicon P-Channel MOS (U-MOS?) TPCF8105 TPCF8105 TPCF8105 TPCF8105 1. Applications 1. Applications 1. Applications 1. Applications � Lithium-Ion Secondary Batteries � Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 24 m? (typ.) (VGS = -4.5 V)

3.6. tpcf8108 en datasheet 100823.pdf Size:219K _toshiba2

TPCF8108 MOSFETs Silicon P-Channel MOS (U-MOS?) TPCF8108 TPCF8108 TPCF8108 TPCF8108 1. Applications 1. Applications 1. Applications 1. Applications � Lithium-Ion Secondary Batteries � Power Management Switches � Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 21 m? (typ.

Otros transistores... TPCA8A01-H , TPCC8001-H , TPCC8002-H , TPCC8003-H , TPCC8005-H , TPCC8006-H , TPCC8102 , TPCF8001 , IRFZ44N , TPCF8103 , TPCF8104 , TPCF8302 , TPCF8303 , TPCL4201 , TPCL4202 , TPCL4203 , TPCM8001-H .

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