TPCF8102
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPCF8102
Marking Code: F3B
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 265
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package: VS8
TPCF8102
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPCF8102
Datasheet (PDF)
..1. Size:224K toshiba
tpcf8102.pdf 
TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 24 m (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V
7.1. Size:264K toshiba
tpcf8104.pdf
TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCF8104 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 21 m (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V
7.2. Size:219K toshiba
tpcf8108.pdf
TPCF8108MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8108TPCF8108TPCF8108TPCF81081. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) =
7.3. Size:223K toshiba
tpcf8105.pdf
TPCF8105MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8105TPCF8105TPCF8105TPCF81051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 24 m (typ.) (VG
7.4. Size:252K toshiba
tpcf8101.pdf
TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 22 m (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -12 V) Enhancement model: Vth = -0.5 to -1.2 V
7.5. Size:228K toshiba
tpcf8107.pdf
TPCF8107MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8107TPCF8107TPCF8107TPCF81071. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) =
7.6. Size:295K toshiba
tpcf8103.pdf
TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Yfs| = 4.7S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement-model: Vth = -0.5 to -1.2 V
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