TPCF8103 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCF8103
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 2.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 80 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Encapsulados: VS8
Búsqueda de reemplazo de TPCF8103 MOSFET
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TPCF8103 datasheet
tpcf8103.pdf
TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 72 m (typ.) High forward transfer admittance Yfs = 4.7S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -20 V) Enhancement-model Vth = -0.5 to -1.2 V
tpcf8104.pdf
TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCF8104 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 21 m (typ.) High forward transfer admittance Yfs = 9.6 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V
tpcf8108.pdf
TPCF8108 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8108 TPCF8108 TPCF8108 TPCF8108 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) =
tpcf8105.pdf
TPCF8105 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8105 TPCF8105 TPCF8105 TPCF8105 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 24 m (typ.) (VG
Otros transistores... TPCC8001-H , TPCC8002-H , TPCC8003-H , TPCC8005-H , TPCC8006-H , TPCC8102 , TPCF8001 , TPCF8102 , IRF740 , TPCF8104 , TPCF8302 , TPCF8303 , TPCL4201 , TPCL4202 , TPCL4203 , TPCM8001-H , TPCM8002-H .
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