TPCF8103 Specs and Replacement
Type Designator: TPCF8103
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: VS8
TPCF8103 substitution
- MOSFET ⓘ Cross-Reference Search
TPCF8103 datasheet
tpcf8103.pdf
TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 72 m (typ.) High forward transfer admittance Yfs = 4.7S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -20 V) Enhancement-model Vth = -0.5 to -1.2 V ... See More ⇒
tpcf8104.pdf
TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCF8104 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 21 m (typ.) High forward transfer admittance Yfs = 9.6 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V ... See More ⇒
tpcf8108.pdf
TPCF8108 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8108 TPCF8108 TPCF8108 TPCF8108 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = ... See More ⇒
tpcf8105.pdf
TPCF8105 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8105 TPCF8105 TPCF8105 TPCF8105 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 24 m (typ.) (VG... See More ⇒
Detailed specifications: TPCC8001-H, TPCC8002-H, TPCC8003-H, TPCC8005-H, TPCC8006-H, TPCC8102, TPCF8001, TPCF8102, IRF740, TPCF8104, TPCF8302, TPCF8303, TPCL4201, TPCL4202, TPCL4203, TPCM8001-H, TPCM8002-H
Keywords - TPCF8103 MOSFET specs
TPCF8103 cross reference
TPCF8103 equivalent finder
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History: WM03N01H
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