TPCF8302 Todos los transistores

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TPCF8302 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPCF8302

Código: F5B

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.35 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 6.2 nS

Conductancia de drenaje-sustrato (Cd): 160 pF

Resistencia drenaje-fuente RDS(on): 0.059 Ohm

Empaquetado / Estuche: VS8

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TPCF8302 Datasheet (PDF)

1.1. tpcf8302.pdf Size:261K _toshiba2

TPCF8302
TPCF8302

TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8302 Notebook PC Applications Unit: mm Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 44 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.2 S (typ.) • Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) • Enhancement mode: Vth = -0.5 to -1.2 V

3.1. tpcf8304.pdf Size:283K _toshiba2

TPCF8302
TPCF8302

TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV) TPCF8304 Notebook PC Applications Unit: mm Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 60 m? (typ.) High forward transfer admittance: |Yfs| = 5.9 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement model: Vth = -0.8 to -2.0 V, (VDS = -10 V,

3.2. tpcf8303.pdf Size:101K _toshiba2

TPCF8302
TPCF8302

TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8303 Notebook PC Applications Unit: mm Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Y | = 6.0 S (typ.) fs • Low leakage current: I = -10 µA (max) (V = -20 V) DSS DS • Enhancement-model: V = -0.45 to -

 3.3. tpcf8305 en datasheet 100729.pdf Size:238K _toshiba2

TPCF8302
TPCF8302

TPCF8305 MOSFETs Silicon P-Channel MOS (U-MOS?) TPCF8305 TPCF8305 TPCF8305 TPCF8305 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 47 m? (typ.) (VGS = -4.5 V) (3) Low leakage current: ID

Otros transistores... TPCC8003-H , TPCC8005-H , TPCC8006-H , TPCC8102 , TPCF8001 , TPCF8102 , TPCF8103 , TPCF8104 , IRF840 , TPCF8303 , TPCL4201 , TPCL4202 , TPCL4203 , TPCM8001-H , TPCM8002-H , TPCM8003-H , TPCM8004-H .

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