TPCF8302 - описание и поиск аналогов

TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8302 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 44 m (typ.) High forward transfer admittance Yfs = 6.2 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -20 V) Enhancement mode Vth = -0.5 to -1.2 V

TPCF8305 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8305 TPCF8305 TPCF8305 TPCF8305 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 47 m (typ.) (VGS = -4.5 V) (3) Low leakage

TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV) TPCF8304 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 60 m (typ.) High forward transfer admittance Yfs = 5.9 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement model Vth = -0.8 to -2.0 V,

TPCF8306 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8306 TPCF8306 TPCF8306 TPCF8306 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 90 m (typ.) (VGS = -4.5 V) (3) Low leakage current

TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8301 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 72 m (typ.) High forward transfer admittance Y = 4.7 S (typ.) fs Low leakage current I = -10 A (max) (V = -20 V) DSS DS Enhancement-model Vth = -0.5 to

TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8303 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 58 m (typ.) High forward transfer admittance Y = 6.0 S (typ.) fs Low leakage current I = -10 A (max) (V = -20 V) DSS DS Enhancement-model V = -0.45 to -