Справочник MOSFET. TPCF8302

 

TPCF8302 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPCF8302
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 6.2 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.059 Ohm
   Тип корпуса: VS8
 

 Аналог (замена) для TPCF8302

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPCF8302 Datasheet (PDF)

 ..1. Size:261K  toshiba
 tpcf8302.pdf pdf_icon

TPCF8302

TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8302 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 44 m (typ.) High forward transfer admittance: |Yfs| = 6.2 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V

 7.1. Size:238K  toshiba
 tpcf8305.pdf pdf_icon

TPCF8302

TPCF8305MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8305TPCF8305TPCF8305TPCF83051. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 47 m (typ.) (VGS = -4.5 V)(3) Low leakage

 7.2. Size:283K  toshiba
 tpcf8304.pdf pdf_icon

TPCF8302

TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV) TPCF8304 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 60 m (typ.) High forward transfer admittance: |Yfs| = 5.9 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement model: Vth = -0.8 to -2.0 V,

 7.3. Size:225K  toshiba
 tpcf8306.pdf pdf_icon

TPCF8302

TPCF8306MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8306TPCF8306TPCF8306TPCF83061. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 90 m (typ.) (VGS = -4.5 V)(3) Low leakage current:

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... TPCC8003-H , TPCC8005-H , TPCC8006-H , TPCC8102 , TPCF8001 , TPCF8102 , TPCF8103 , TPCF8104 , 20N60 , TPCF8303 , TPCL4201 , TPCL4202 , TPCL4203 , TPCM8001-H , TPCM8002-H , TPCM8003-H , TPCM8004-H .

History: STF32N65M5 | 2SK1206 | IXTH90P10P

 

 
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