TPCM8102 Todos los transistores

 

TPCM8102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCM8102
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 740 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0077 Ohm
   Paquete / Cubierta: TSSOP-ADVANCE
     - Selección de transistores por parámetros

 

TPCM8102 Datasheet (PDF)

 ..1. Size:310K  toshiba
tpcm8102.pdf pdf_icon

TPCM8102

TPCM8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCM8102 Lithium Ion Battery Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.250.050.80.05 M A 8 5 Small footprint due to a small and thin package 0.20 0.2 Low drain-source ON-resistance: RDS (ON) = 6.0 m (typ.) High forward transfer a

 9.1. Size:538K  toshiba
tpcm8001-h.pdf pdf_icon

TPCM8102

TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications 0.250.050.80.05 M A8 5Portable-Equipment Applications 0.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate char

 9.2. Size:307K  toshiba
tpcm8003-h.pdf pdf_icon

TPCM8102

TPCM8003-H NMOS (U-MOS-H) TPCM8003-H DC/DC : mm PC 0.250.050.80.05 M A 8 50.200.2 0.5541

 9.3. Size:199K  toshiba
tpcm8006.pdf pdf_icon

TPCM8102

TPCM8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCM8006 Lithium Ion Battery Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.250.050.80.05 M A8 5 Small footprint due to a small and thin package 0.200.2 Low drain-source ON-resistance: RDS (ON) = 5.5 m (typ.) High forward transfer adm

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History: CS640F | SSF11NS70UF | WNM3003 | SI4368DY | SP8K24FRA | GP2M010A065X | SWK15N04V

 

 
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