TPCM8102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPCM8102

Código: M8102

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 13 nS

Conductancia de drenaje-sustrato (Cd): 740 pF

Resistencia drenaje-fuente RDS(on): 0.0077 Ohm

Empaquetado / Estuche: TSSOP_Advance

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TPCM8102 Datasheet (PDF)

1.1. tpcm8102.pdf Size:310K _toshiba2

TPCM8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPCM8102 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications 0.25±0.05 0.8 0.05 M A 8 5 • Small footprint due to a small and thin package 0.2＋0 － 0.2 • Low drain-source ON-resistance: RDS (ON) = 6.0 mΩ (typ.) • High forward transfer a

5.1. tpcm8006.pdf Size:199K _toshiba2

TPCM8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCM8006 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications 0.25±0.05 0.8 0.05 M A 8 5 • Small footprint due to a small and thin package 0.2＋0 －0.2 • Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.) • High forward transfer adm

5.2. tpcm8004-h.pdf Size:218K _toshiba2

TPCM8004-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCM8004-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications 0.25±0.05 0.8 0.05 M A Portable Equipment Applications 8 5 0.2＋0 －0.2 • Small footprint due to a small and thin package • High-speed switching 0.55 4 1 • Small gate charge: QSW = 5.0 nC (ty

5.3. tpcm8002-h.pdf Size:238K _toshiba2

TPCM8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPCM8002-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications ±0.05 0.25 0.8 0.05 M A 5 Portable Equipment Applications 8 0.2＋0 －0.2 • Small footprint due to a small and thin package • High-speed switching 0.55 4 1 • Small gate charge: QSW = 9.3 nC

5.4. tpcm8001-h.pdf Size:538K _toshiba2

TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DC／DC Converter Applications Unit: mm Notebook PC Applications 0.25±0.05 0.8 0.05 M A 8 5 Portable-Equipment Applications 0.2＋0 －0.2 • Small footprint due to a small and thin package • High-speed switching 0.55 4 1 • Small gate char

5.5. tpcm8003-h.pdf Size:307K _toshiba2

TPCM8003-H 東芝電界効果トランジスタシリコンNチャネルMOS形 (U-MOSⅤ-H) TPCM8003-H ○ 高効率DC/DCコンバータ用単位: mm ○ ノートブックPC用 0.25±0.05 0.8 0.05 M A ○ 携帯電子機器用 8 5 0.2＋0 －0.2 • 小型､薄型で実装面積が小さい。 • スイッチングスピードが速い。 0.55 4 1 • ゲート�

5.6. tpcm8a05-h.pdf Size:245K _toshiba2

TPCM8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCM8A05-H High Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications 0.25±0.05 0.8 0.05 M A Portable Equipment Applications 8 5 • Built-in a schottky barrier diode 0.2＋0 －0.2 Low forward voltage: V = 0.6 V (Max.) DSF • H

Otros transistores... TPCL4201 , TPCL4202 , TPCL4203 , TPCM8001-H , TPCM8002-H , TPCM8003-H , TPCM8004-H , TPCM8006 , IRF1404 , TPCM8A05-H , TPCP8001-H , TPCP8002 , TPCP8201 , TPCP8202 , TPCP8301 , TPCP8302 , TPCP8402 .

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