Справочник MOSFET. TPCM8102

 

TPCM8102 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPCM8102
   Маркировка: M8102
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 60 nC
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 740 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0077 Ohm
   Тип корпуса: TSSOP-ADVANCE

 Аналог (замена) для TPCM8102

 

 

TPCM8102 Datasheet (PDF)

 ..1. Size:310K  toshiba
 tpcm8102.pdf

TPCM8102 TPCM8102

TPCM8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCM8102 Lithium Ion Battery Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.250.050.80.05 M A 8 5 Small footprint due to a small and thin package 0.20 0.2 Low drain-source ON-resistance: RDS (ON) = 6.0 m (typ.) High forward transfer a

 9.1. Size:538K  toshiba
 tpcm8001-h.pdf

TPCM8102 TPCM8102

TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications 0.250.050.80.05 M A8 5Portable-Equipment Applications 0.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate char

 9.2. Size:307K  toshiba
 tpcm8003-h.pdf

TPCM8102 TPCM8102

TPCM8003-H NMOS (U-MOS-H) TPCM8003-H DC/DC : mm PC 0.250.050.80.05 M A 8 50.200.2 0.5541

 9.3. Size:199K  toshiba
 tpcm8006.pdf

TPCM8102 TPCM8102

TPCM8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCM8006 Lithium Ion Battery Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.250.050.80.05 M A8 5 Small footprint due to a small and thin package 0.200.2 Low drain-source ON-resistance: RDS (ON) = 5.5 m (typ.) High forward transfer adm

 9.4. Size:238K  toshiba
 tpcm8002-h.pdf

TPCM8102 TPCM8102

TPCM8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCM8002-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.050.250.80.05 M A5Portable Equipment Applications 80.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate charge: QSW = 9.3 nC

 9.5. Size:218K  toshiba
 tpcm8004-h.pdf

TPCM8102 TPCM8102

TPCM8004-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCM8004-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.250.050.80.05 M APortable Equipment Applications 8 50.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate charge: QSW = 5.0 nC (ty

 9.6. Size:245K  toshiba
 tpcm8a05-h.pdf

TPCM8102 TPCM8102

TPCM8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCM8A05-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.250.050.80.05 M APortable Equipment Applications 8 5 Built-in a schottky barrier diode 0.200.2Low forward voltage: V = 0.6 V (Max.) DSF H

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