TPCP8301 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPCP8301
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
   Paquete / Cubierta: PS8

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TPCP8301 Datasheet (PDF)

..1. Size:294K toshiba
tpcp8301.pdf

TPCP8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCP8301 Lithium Ion Battery Applications Unit: mmNotebook PC Applications 0.330.05Portable Equipment Applications 0.05 M A 8 5 Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 m (typ.) High forward transfer admittan

7.1. Size:226K toshiba
tpcp8305.pdf

TPCP8305MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8305TPCP8305TPCP8305TPCP83051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 23 m (typ.) (VG

7.2. Size:265K toshiba
tpcp8302.pdf

TPCP8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCP8302 Unit: mmLithium Ion Battery Applications 0.330.05Notebook PC Applications 0.05 M A 8 5Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 m (typ.) 0.475 1 4 High forward transfer admittance: |Yfs

7.3. Size:221K toshiba
tpcp8303.pdf

TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Unit: mmLithium Ion Battery Applications 0.330.05Notebook PC Applications 0.05 M A 8 5Portable Equipment Applications Low drain-source ON-resistance: RDS(ON) = 41 m (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) 0.475 1 4 Low leakage current: IDSS = -10

7.4. Size:229K toshiba
tpcp8306.pdf

TPCP8306MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8306TPCP8306TPCP8306TPCP83061. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 47 m (typ.) (VGS = -4.5 V)(3) Low leakage

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TPCS8008-H

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