TPCP8301 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCP8301
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.48 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 220 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
Encapsulados: PS8
Búsqueda de reemplazo de TPCP8301 MOSFET
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TPCP8301 datasheet
tpcp8301.pdf
TPCP8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCP8301 Lithium Ion Battery Applications Unit mm Notebook PC Applications 0.33 0.05 Portable Equipment Applications 0.05 M A 8 5 Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance RDS(ON) = 25 m (typ.) High forward transfer admittan
tpcp8305.pdf
TPCP8305 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8305 TPCP8305 TPCP8305 TPCP8305 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 23 m (typ.) (VG
tpcp8302.pdf
TPCP8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCP8302 Unit mm Lithium Ion Battery Applications 0.33 0.05 Notebook PC Applications 0.05 M A 8 5 Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS(ON) = 25 m (typ.) 0.475 1 4 High forward transfer admittance Yfs
tpcp8303.pdf
TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Unit mm Lithium Ion Battery Applications 0.33 0.05 Notebook PC Applications 0.05 M A 8 5 Portable Equipment Applications Low drain-source ON-resistance RDS(ON) = 41 m (typ.) High forward transfer admittance Yfs = 12 S (typ.) 0.475 1 4 Low leakage current IDSS = -10
Otros transistores... TPCM8004-H , TPCM8006 , TPCM8102 , TPCM8A05-H , TPCP8001-H , TPCP8002 , TPCP8201 , TPCP8202 , AON6414A , TPCP8302 , TPCP8402 , TPCP8403 , TPCS8004 , TPCS8006 , TPCS8007-H , TPCS8008-H , TPCS8009-H .
History: GWM120-0075X1-SMD
History: GWM120-0075X1-SMD
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