TPCP8301 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPCP8301
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.48 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 220 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.031 Ohm
Тип корпуса: PS8
- подбор MOSFET транзистора по параметрам
TPCP8301 Datasheet (PDF)
tpcp8301.pdf

TPCP8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCP8301 Lithium Ion Battery Applications Unit: mmNotebook PC Applications 0.330.05Portable Equipment Applications 0.05 M A 8 5 Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 m (typ.) High forward transfer admittan
tpcp8305.pdf

TPCP8305MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8305TPCP8305TPCP8305TPCP83051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 23 m (typ.) (VG
tpcp8302.pdf

TPCP8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCP8302 Unit: mmLithium Ion Battery Applications 0.330.05Notebook PC Applications 0.05 M A 8 5Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 m (typ.) 0.475 1 4 High forward transfer admittance: |Yfs
tpcp8303.pdf

TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Unit: mmLithium Ion Battery Applications 0.330.05Notebook PC Applications 0.05 M A 8 5Portable Equipment Applications Low drain-source ON-resistance: RDS(ON) = 41 m (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) 0.475 1 4 Low leakage current: IDSS = -10
Другие MOSFET... TPCM8004-H , TPCM8006 , TPCM8102 , TPCM8A05-H , TPCP8001-H , TPCP8002 , TPCP8201 , TPCP8202 , P55NF06 , TPCP8302 , TPCP8402 , TPCP8403 , TPCS8004 , TPCS8006 , TPCS8007-H , TPCS8008-H , TPCS8009-H .
History: DMN3052LSS | FHF630A
History: DMN3052LSS | FHF630A



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