TPCS8007-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPCS8007-H
   Código: S8007
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TSSOP8

Búsqueda de reemplazo de MOSFET TPCS8007-H

TPCS8007-H Datasheet (PDF)

..1. Size:235K toshiba
tpcs8007-h.pdf

TPCS8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCS8007-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.) High forward transfer admittance: |Yfs| = 2.1 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS =

7.1. Size:215K toshiba
tpcs8008-h.pdf

TPCS8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCS8008-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS =

7.2. Size:235K toshiba
tpcs8009-h.pdf

TPCS8009-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCS8009-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance: RDS (ON) = 0.27 (typ.) High forward transfer admittance: |Yfs| = 2.1 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS =

7.3. Size:157K toshiba
tpcs8006.pdf

TPCS8006 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) TPCS8006 High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications Low drain-source ON resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 250 V)

7.4. Size:224K toshiba
tpcs8004.pdf

TPCS8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) TPCS8004 High Speed Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converters Small footprint due to small and thin package Low drain-source ON resistance: R = 0.56 (typ.) DS (ON) High forward transfer admittance: |Y | = 1.8 S (typ.) fs Low leakage curr

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