TPCS8007-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCS8007-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Paquete / Cubierta: TSSOP8
Búsqueda de reemplazo de TPCS8007-H MOSFET
TPCS8007-H Datasheet (PDF)
tpcs8007-h.pdf

TPCS8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCS8007-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.) High forward transfer admittance: |Yfs| = 2.1 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS =
tpcs8008-h.pdf

TPCS8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCS8008-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS =
tpcs8009-h.pdf

TPCS8009-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCS8009-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance: RDS (ON) = 0.27 (typ.) High forward transfer admittance: |Yfs| = 2.1 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS =
tpcs8006.pdf

TPCS8006 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) TPCS8006 High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications Low drain-source ON resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 250 V)
Otros transistores... TPCP8201 , TPCP8202 , TPCP8301 , TPCP8302 , TPCP8402 , TPCP8403 , TPCS8004 , TPCS8006 , AON7408 , TPCS8008-H , TPCS8009-H , TPCS8101 , TPCS8102 , TPCS8104 , TPCS8105 , TPCS8204 , TPCS8205 .
History: QM3004N3 | STN4826 | BRI2N70
History: QM3004N3 | STN4826 | BRI2N70



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