TPCS8007-H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPCS8007-H
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.9 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 220 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.45 Ohm
Тип корпуса: TSSOP8
Аналог (замена) для TPCS8007-H
TPCS8007-H Datasheet (PDF)
tpcs8007-h.pdf

TPCS8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCS8007-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.) High forward transfer admittance: |Yfs| = 2.1 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS =
tpcs8008-h.pdf

TPCS8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCS8008-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS =
tpcs8009-h.pdf

TPCS8009-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCS8009-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance: RDS (ON) = 0.27 (typ.) High forward transfer admittance: |Yfs| = 2.1 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS =
tpcs8006.pdf

TPCS8006 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) TPCS8006 High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications Low drain-source ON resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 250 V)
Другие MOSFET... TPCP8201 , TPCP8202 , TPCP8301 , TPCP8302 , TPCP8402 , TPCP8403 , TPCS8004 , TPCS8006 , AON7408 , TPCS8008-H , TPCS8009-H , TPCS8101 , TPCS8102 , TPCS8104 , TPCS8105 , TPCS8204 , TPCS8205 .
History: STD30PF03L-1 | SWT69N65K2F | APT60M75L2LL | AOH3106 | 2SJ285 | HAT1072H
History: STD30PF03L-1 | SWT69N65K2F | APT60M75L2LL | AOH3106 | 2SJ285 | HAT1072H



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