BUK9518-55 Todos los transistores

 

BUK9518-55 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK9518-55
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: SOT78
     - Selección de transistores por parámetros

 

BUK9518-55 Datasheet (PDF)

 ..1. Size:52K  philips
 buk9518-55.pdf pdf_icon

BUK9518-55

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 57 Alow on-state resist

 0.1. Size:333K  philips
 buk9518-55a buk9618-55a.pdf pdf_icon

BUK9518-55

BUK9518-55A; BUK9618-55ATrenchMOS logic level FETRev. 01 27 August 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9518-55A in SOT78 (TO-220AB)2BUK9618-55A in SOT404 (D -PAK).2. Features TrenchMOS technology Q

 0.2. Size:225K  inchange semiconductor
 buk9518-55a.pdf pdf_icon

BUK9518-55

isc N-Channel MOSFET Transistor BUK9518-55AFEATURESStatic drain-source on-resistance:RDS(on) 16mFully characterized avalanche voltage and current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONAutomotive and general purpose power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 6.1. Size:47K  philips
 buk9518-30 1.pdf pdf_icon

BUK9518-55

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 55 Alow on-state resist

MOSTRAR MÁS

Otros transistores... BUK7880-55 , BUK9120-48TC , BUK9506-30 , BUK9508-55 , BUK9510-30 , BUK9514-30 , BUK9514-55 , BUK9518-30 , MMD60R360PRH , BUK9520-55 , BUK9524-55 , BUK9528-55 , BUK9535-55 , BUK9606-30 , BUK9608-55 , BUK9610-30 , BUK9614-30 .

History: CEM9936A | LSH65R1K5HT

 

 
Back to Top

 


 
.